I used to be looking through the web but could not discover any facts clarify how lower threshold voltage is fast but consume additional power and how large threshold voltage is sluggish but consumes small electrical power.
知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。
知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。
You are able to modify the outlined parameters, and compare it using a "great" result which takes two hrs siumlation time. Based on your criteria, you could hasten the simulation time.
So can any individual please reveal how FET with minimal threshold voltage has greater velocity and higher leakage present-day even though FET with higher threshold will be gradual but reduced on ability?
知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。
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In the event of lvt, conc. of doping and oxide thickness is a lot more compare to hvt.. Which The key reason why that more the doping, so more velocity and even more leakage Examine to hvt.
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